In Situ Dielectric Al ₂ O ₃ /β‐Ga ₂ O ₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3 on β-Ga2O3 as a potentially better alternative to most commonly used atomic layer (ALD). The growth is performed same reactor Ga2O3 using trimethylaluminum and O2 precursors without breaking vacuum at temperature 600 °C. fast slow near interface traps Al2O3/β-Ga2O3 identified quantified stressed capacitance–voltage (CV) measurements metal oxide semiconductor capacitor (MOSCAP) structures. density shallow deep level initially filled (Dit) measured ultraviolet-assisted CV technique. average Dit MOSCAP determined be 6.4 × 1011 cm−2eV−1. conduction band offset Al2O3/ also from found out 1.7 eV which close agreement with existing literature ALD Al2O3/Ga2O3 interface. current–voltage characteristics analyzed breakdown field extracted approximately 5.8 MV cm−1. dielectric improved properties can enable Ga2O3-based devices.